| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2KBP005 |
50V Bridge in a D-44 package |
International Rectifier |
| 2 |
2KBP005 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 3 |
2KBP0056 |
2AMP glass passivated silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
| 4 |
2KBP005G |
2 AMP glass passivated silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
| 5 |
2KBP005G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 6 |
2KBP005M |
Bridge Rectifiers |
Fairchild Semiconductor |
| 7 |
2KBP005M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 8 |
2KBP005M |
Diode Rectifier Bridge Single 50V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 9 |
2KBP005M |
50 V, 2 A, in-line glass passivated single phase rectifier bridge |
TRANSYS Electronics Limited |
| 10 |
2KBP005M |
IN-LINE GLASS PASSIVATED SINGLE PHASE RECTIFIER BRIDGE |
TRSYS |
| 11 |
2KBP005M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 12 |
2KBP005M |
2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 13 |
2KBP005M/3N253 |
2.0 Ampere Bridge Rectifiers |
Fairchild Semiconductor |
| 14 |
3KBP005M |
Diodes |
Vishay |
| 15 |
5962P0052401VPA |
Voltage Comparator |
National Semiconductor |
| 16 |
5962P0052401VPA |
Voltage Comparator |
National Semiconductor |
| 17 |
5962P0052401VPA |
Voltage Comparator |
National Semiconductor |
| 18 |
5962P0052401VPA |
Voltage Comparator |
National Semiconductor |
| 19 |
5962P0052401VPA |
Voltage Comparator |
National Semiconductor |
| 20 |
5962P0053601QUA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 21 |
5962P0053601QUC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 22 |
5962P0053601QUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 23 |
5962P0053601QXA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 24 |
5962P0053601QXC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 25 |
5962P0053601QXX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 26 |
5962P0053601TUA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 27 |
5962P0053601TUC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 28 |
5962P0053601TUX |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 29 |
5962P0053601TXA |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 30 |
5962P0053601TXC |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
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