| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTP1N120BN |
5.3A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 2 |
HGTP1N120BN |
5.3A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 3 |
HGTP1N120BND |
5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 4 |
HGTP1N120BND |
5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 5 |
HGTP1N120CN |
6.2A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 6 |
HGTP1N120CN |
6.2A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 7 |
HGTP1N120CND |
6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 8 |
HGTP1N120CND |
6.2A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 9 |
IXTP1N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 10 |
IXTP1N100 |
High Voltage MOSFET |
IXYS Corporation |
| 11 |
MTP1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM |
Motorola |
| 12 |
MTP1N100E |
1 Amp TO-220AB, N-Channel, VDSS 1000 |
ON Semiconductor |
| 13 |
MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 14 |
STP1N105K3 |
N-channel 1050 V, 8 Ohm typ., 1.4 A SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
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