| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FCP25N60N |
N-Channel SupreMOS� MOSFET 600V, 25A, 125m? |
Fairchild Semiconductor |
| 2 |
IRG8P25N120KD |
1200V UltraFast Co-Pack IGBT in a TO-247 package |
International Rectifier |
| 3 |
IRG8P25N120KD-EPBF |
1200V UltraFast Co-Pack IGBT in a TO-247 package |
International Rectifier |
| 4 |
MTP25N05E |
FET Transistor |
New Jersey Semiconductor |
| 5 |
RFP25N05 |
25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFET |
Intersil |
| 6 |
RFP25N05 |
Trans MOSFET N-CH 50V 25A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 7 |
RFP25N05L |
25A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFET |
Intersil |
| 8 |
RFP25N06 |
25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 9 |
RFP25N06 |
25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 10 |
STP25N06 |
Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 11 |
STP25N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 12 |
STP25N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 13 |
STP25N06FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 14 |
STP25N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 15 |
STP25N10F7 |
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 16 |
STP25N80K5 |
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 17 |
STP25NM50N |
N-CHANNEL 550V @ TjMAX - 0.12 Ohm - 21.5 A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
| 18 |
STP25NM60N |
N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
ST Microelectronics |
| 19 |
STP25NM60ND |
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package |
ST Microelectronics |
| | | |
