| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ASM3P2863 |
Standard Peak EMI Reducing solution |
ON Semiconductor |
| 2 |
ASM3P2869A-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 3 |
ASM3P2869A-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 4 |
ASM3P2869A-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 5 |
ASM3P2869A-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 6 |
ASM3P2869A-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 7 |
ASM3P2869AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 8 |
ASM3P2869AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 9 |
ASM3P2869AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 10 |
ASM3P2869AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 11 |
ASM3P2869AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 12 |
BDP286 |
Tranzystor ma�ej cz�stotliwo�ci du�ej mocy |
Ultra CEMI |
| 13 |
NCP2860 |
300 mA Very Low Noise LDO |
ON Semiconductor |
| 14 |
NCP2860-D |
300 mA Very Low Noise, Low Dropout Linear Regulator |
ON Semiconductor |
| 15 |
NCP2860DM277R2 |
300 mA Very Low Noise LDO |
ON Semiconductor |
| 16 |
PCS1P2860 |
Multi-Output Clock Synthesizer |
ON Semiconductor |
| 17 |
ZLF645E0P2864G |
20-/28-/48-Pin Flash MCU with IR Learning Amplification |
MAXIM - Dallas Semiconductor |
| 18 |
ZLF645E0P2864G2204 |
20-/28-/48-Pin Flash MCU with IR Learning Amplification |
MAXIM - Dallas Semiconductor |
| 19 |
ZLF645S0P2864G |
20-/28-/48-Pin Flash MCU with IR Learning Amplification |
MAXIM - Dallas Semiconductor |
| | | |
