| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FQP2N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 2 |
FQP2N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 3 |
MTP2N60 |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
Motorola |
| 4 |
MTP2N60E |
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
Motorola |
| 5 |
MTP2N60E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 6 |
MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 7 |
PHP2N60 |
PowerMOS transistor |
Philips |
| 8 |
PHP2N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 9 |
SSP2N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 10 |
STP2N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 11 |
STP2N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 12 |
STP2N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 13 |
STP2N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 14 |
STP2N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 15 |
STP2N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
