| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IXFP3N120 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 2 |
IXTP3N110 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 3 |
IXTP3N120 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 4 |
MTP3N100 |
N-channel TMOS power FET. 1000 V, 3 A, Rds(on) 4 Ohm. |
Motorola |
| 5 |
MTP3N100E |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
Motorola |
| 6 |
MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 7 |
MTP3N120E |
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM |
Motorola |
| 8 |
MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 9 |
STP3N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 10 |
STP3N100 |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 11 |
STP3N100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 12 |
STP3N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 13 |
STP3N100FI |
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 14 |
STP3N100FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 15 |
STP3N150 |
N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-220 package |
ST Microelectronics |
| | | |
