| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FCP4N60 |
N-Channel SuperFET� MOSFET 600V, 3.9A, 1.2? |
Fairchild Semiconductor |
| 2 |
FQP4N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 3 |
MGP4N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 4 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5 |
MGP4N60ED |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
ON Semiconductor |
| 6 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 7 |
MTP4N60 |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
| 8 |
PHP4N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 9 |
SSP4N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 10 |
SSP4N60AS |
Advanced Power MOFET |
Fairchild Semiconductor |
| 11 |
SSP4N60AS |
Advanced Power MOFET |
Samsung Electronic |
| 12 |
SSP4N60B |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 13 |
STP4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
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