| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FQP6N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 2 |
FQP6N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 3 |
MTP6N60 |
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 4 |
MTP6N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 5 |
MTP6N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 6 |
MTP6N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 7 |
MTP6N60E |
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS |
Motorola |
| 8 |
MTP6N60E |
Power Field Effect Transistor |
ON Semiconductor |
| 9 |
MTP6N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 10 |
NTP6N60-D |
Power MOSFET 6 Amps, 600 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
| 11 |
PHP6N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 12 |
SGP6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 13 |
SGP6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 14 |
SGP6N60UFDTU |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
| 15 |
SSP6N60 |
N-Channel Power MOSFET |
Samsung Electronic |
| 16 |
STP6N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 17 |
STP6N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 18 |
STP6N60FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 19 |
STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 20 |
STP6N62K3 |
N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 21 |
STP6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220 package |
ST Microelectronics |
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