| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CP801 |
SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A) |
Panjit International Inc |
| 2 |
CP801 |
100 V single phase silicon bridge |
TRANSYS Electronics Limited |
| 3 |
CP801 |
SINGLE-PHASE SILICON BRIDGE |
TRSYS |
| 4 |
CYNCP80192 |
Network Database Coprocessor |
Cypress |
| 5 |
CYNCP80192-BGC |
Network Database Coprocessor |
Cypress |
| 6 |
DAP801 |
Small Signal Diode Arrays |
Diotec Elektronische |
| 7 |
DAP801 |
Diode Switching 80V 0.08A 9-Pin SIP |
New Jersey Semiconductor |
| 8 |
GP801DCM18 |
Hi-Reliability Chopper Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
| 9 |
GP801DCS18 |
Chopper Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
| 10 |
GP801DDM18 |
Hi-Reliability Dual Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
| 11 |
GP801DDS18 |
Dual Switch Low VCE(SAT) IGBT Module |
Dynex Semiconductor |
| 12 |
GP801FSM18 |
Hi-Reliability Single Switch Low VCE(SAT) IGBT Module |
Dynex Semiconductor |
| 13 |
K7P801811M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet |
Samsung Electronic |
| 14 |
K7P801866M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet |
Samsung Electronic |
| 15 |
LP801 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
| 16 |
MP801 |
PNP germanium power transistor designed for ultra-high current applications, high gain, extremely low saturation voltage |
Motorola |
| 17 |
NUP8010MN |
Low Capacitance Transient Voltage Suppressor Array |
ON Semiconductor |
| 18 |
NUP8011MU |
Low Capacitance Transient Voltage Suppressor Array |
ON Semiconductor |
| 19 |
OP801 |
NPN silicon phototransistor. |
Optek Technology |
| 20 |
OP801SL |
NPN silicon phototransistor |
Optek Technology |
| 21 |
OP801W |
NPN silicon phototransistor. |
Optek Technology |
| 22 |
OP801WSL |
NPN SILICON PHOTOTRANSISTORS |
Optek Technology |
| 23 |
TLP801A |
Photo .Interrupter Infrared LED+Phototransistor |
TOSHIBA |
| 24 |
TLP801AF |
INFRARED LED + PHOTOTRANSISTOR |
TOSHIBA |
| 25 |
TP801C04 |
Schottky barrier diode |
COLLMER SEMICONDUCTOR INC |
| 26 |
TP801C04 |
SCHOTTKY BARRIER DIODE |
Fuji Electric |
| 27 |
TP801C06 |
Schottky barrier diode |
COLLMER SEMICONDUCTOR INC |
| 28 |
TP801C06 |
SCHOTTKY BARRIER DIODE |
Fuji Electric |
| 29 |
TPCP8010 |
Power MOSFET (N-ch single 30V<VDSS≤60V) |
TOSHIBA |
| 30 |
TPCP8011 |
Power MOSFET (N-ch single 30V<VDSS≤60V) |
TOSHIBA |
| | | |
