No. |
Part Name |
Description |
Manufacturer |
1 |
D2525P914 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 191.4. Wavelength 1566.31 Tolerance +-0.4nm. |
Agere Systems |
2 |
D2547P914 |
Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules |
Agere Systems |
3 |
D2587P914 |
Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules |
Agere Systems |
4 |
D2587P9145 |
Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules |
Agere Systems |
5 |
IRFP9140 |
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
6 |
IRFP9140 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
7 |
IRFP9140 |
P-Channel Power MOSFET |
Intersil |
8 |
IRFP9140 |
100 V, P-channel power MOSFET |
Samsung Electronic |
9 |
IRFP9140N |
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
10 |
IRFP9140NPBF |
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
11 |
IRFP9141 |
60 V, P-channel power MOSFET |
Samsung Electronic |
12 |
IRFP9142 |
100 V, P-channel power MOSFET |
Samsung Electronic |
13 |
IRFP9143 |
60 V, P-channel power MOSFET |
Samsung Electronic |
14 |
PB-IRFP9140N |
Leaded -100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
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