| No. |
Part Name |
Description |
Manufacturer |
| 1 |
30KPA250 |
Diode TVS Single Uni-Dir 258V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 2 |
30KPA250A |
Diode TVS Single Uni-Dir 250V 30KW |
New Jersey Semiconductor |
| 3 |
30KPA250C |
Diode TVS Single Uni-Dir 250V 30KW |
New Jersey Semiconductor |
| 4 |
30KPA250CA |
Diode TVS Single Bi-Dir 250V 30KW |
New Jersey Semiconductor |
| 5 |
CPA250 |
250 WATT |
Power-One |
| 6 |
CPA250-4530 |
250 WATT |
Power-One |
| 7 |
MXD1005PA250 |
5-tap silicon delay line |
MAXIM - Dallas Semiconductor |
| 8 |
RMPA25000 |
23.5-26 GHz 2 Watt power amplifier MMIC |
Raytheon |
| 9 |
UPA2502 |
N-ch enhancement-type MOSFET |
NEC |
| 10 |
UPA2502TM |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 11 |
UPA2502TM-E1 |
N-ch enhancement-type MOSFET |
NEC |
| 12 |
UPA2502TM-E2 |
N-ch enhancement-type MOSFET |
NEC |
| 13 |
UPA2503 |
N-ch enhancement-type MOSFET |
NEC |
| 14 |
UPA2503TM |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 15 |
UPA2503TM-E1 |
N-ch enhancement-type MOSFET |
NEC |
| 16 |
UPA2503TM-E2 |
N-ch enhancement-type MOSFET |
NEC |
| | | |
