| No. |
Part Name |
Description |
Manufacturer |
| 1 |
KBPC810 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 2 |
KBPC810 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
DC Components |
| 3 |
KBPC810 |
Silicon-Bridge Rectifiers |
Diotec Elektronische |
| 4 |
KBPC810 |
8 AMP SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5 |
KBPC810 |
SINGLE-PHASE SILICON BRIDGE |
GOOD-ARK Electronics |
| 6 |
KBPC810 |
1000 V, 6 A single-phase silicon bridge |
Honey Technology |
| 7 |
KBPC810 |
1000V Bridge in a D-72 package |
International Rectifier |
| 8 |
KBPC810 |
1000 V, 8 A single-phase silicon bridge rectifier |
Invac |
| 9 |
KBPC810 |
SINGLE PHASE 8.0 AMPS. SILICON BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 10 |
KBPC810 |
Diode Rectifier Bridge Single 1KV 8A 4-Pin D-72 |
New Jersey Semiconductor |
| 11 |
KBPC810 |
8.0A SINGLE - PHASE SILICON BRIDGE |
Semtech |
| 12 |
KBPC810 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 13 |
KBPC810 |
SINGLE PHASE SILICON BRIDGE RECTIFIER |
Shanghai Sunrise Electronics |
| 14 |
KBPC810 |
8.0A BRIDGE RECTIFIER |
Won-Top Electronics |
| 15 |
KBPC810G |
SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 16 |
KBPC810G |
8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 17 |
LPC810M021FN8 |
32-bit ARM Cortex-M0+ microcontroller; 4 kB flash and 1 kB SRAM |
NXP Semiconductors |
| 18 |
PC810 |
High Speed Under High Load Resistance Photocoupler |
SHARP |
| 19 |
PC810A |
High sensitivity,AC input type photocoupler |
SHARP |
| 20 |
PC810B |
High sensitivity,AC input type photocoupler |
SHARP |
| 21 |
RKBPC810 |
8 AMP FAST RECOVERY BRIDGE RECTIFIER |
Fuji Electric |
| 22 |
TPC8102 |
Field Effect Transistor Silicon P Channel MOS Type (pi-MOSVI) Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications |
TOSHIBA |
| 23 |
TPC8103 |
Field Effect Transistor |
TOSHIBA |
| 24 |
TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications |
TOSHIBA |
| 25 |
TPC8105-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications |
TOSHIBA |
| 26 |
TPC8106-H |
SILICON P CHANNEL MOS TYPE |
TOSHIBA |
| 27 |
TPC8107 |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
TOSHIBA |
| 28 |
TPC8108 |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications��Notebook PC Applications��Portable Equipment Applications |
TOSHIBA |
| 29 |
TPC8109 |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
TOSHIBA |
| 30 |
UPC8100 |
SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS |
NEC |
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