| No. |
Part Name |
Description |
Manufacturer |
| 1 |
70EPF08 |
800V Fast Recovery Diode in a PowIRtab package |
International Rectifier |
| 2 |
85EPF08 |
800V Fast Recovery Diode in a PowIRtab package |
International Rectifier |
| 3 |
E2081606_PF08127B |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
Renesas |
| 4 |
FDPF085N10A |
N-Channel PowerTrench� MOSFET 100V, 40A, 8.5m? |
Fairchild Semiconductor |
| 5 |
FFPF08H60S |
8A, 600V, Hyperfast II Diode |
Fairchild Semiconductor |
| 6 |
FFPF08S60S |
8A, 600V, STEALTH� II Diode |
Fairchild Semiconductor |
| 7 |
FFPF08S60SN |
8A, 600V, STEALTH� II Diode |
Fairchild Semiconductor |
| 8 |
FFPF08S60ST |
8A, 600V, STEALTH� II Diode |
Fairchild Semiconductor |
| 9 |
MCPF08N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 10 |
PF08103A |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 11 |
PF08103B |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
Hitachi Semiconductor |
| 12 |
PF08109B |
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
Renesas |
| 13 |
PF08127B |
ASSP>Mobile Phones>RF Power Amplifiers |
Renesas |
| 14 |
PF08134B |
ASSP>Mobile Phones>RF Power Amplifiers |
Renesas |
| | | |
