Datasheets for PL-10

Datasheets found :: 17 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	KDA0478PL-100	100MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing	Samsung Electronic
2	LC338128PL-10	1 MEG (131072 words x 8 bit) pseudo-SRAM	SANYO
3	LC33832PL-10	256K (32768word x 8bit) Pseudo-SRAM	SANYO
4	MPL-102S	Ultrafast recovery diodes	Sanken
5	MPL-1036S	Ultrafast recovery diodes	Sanken
6	PL-1061	Mobile computing system: MIPS R3000 compatible 32-bit RISC core with MAC co-processor running at maximum speed of 100MHz	Prolific
7	TC514100APL-10	4,194,304 WORD x BIT DYNAMIC RAM	TOSHIBA
8	TC514400APL-10	100 ns, 4-bit generation dynamic RAM	TOSHIBA
9	TC51832PL-10	100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM	TOSHIBA
10	TC51832SPL-10	100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM	TOSHIBA
11	TC55257APL-10	TOSHIBA MOS MEMORY PRODUCTS	TOSHIBA
12	TC55257BPL-10	SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM	TOSHIBA
13	TC55257BPL-10L	SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM	TOSHIBA
14	TC55257BSPL-10L	100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM	TOSHIBA
15	TC55257CPL-10	SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM	TOSHIBA
16	TC55257CSPL-10	SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM	TOSHIBA
17	TC5565APL-10	65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology	TOSHIBA

Datasheets found :: 17 Page: | 1 |