| No. |
Part Name |
Description |
Manufacturer |
| 1 |
103-1 |
Application Note - Flash Analog to Digital Converters Optimizing Performance |
Comlinear Corporation |
| 2 |
10DL2C48A |
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 3 |
10FL2C48A |
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 4 |
10FL2CZ47A |
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 5 |
1CE-402 |
Operating Considerations for RCA Solid State Devices - Application Note |
RCA Solid State |
| 6 |
1N4387 |
Silicon varactor diode for high-power frecquency multiplication applications |
Motorola |
| 7 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 8 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 9 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 10 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 11 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 12 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 13 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 14 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 15 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 16 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 17 |
1SV160 |
Variable Capacitance Diode AFC Application for FM Receiver |
TOSHIBA |
| 18 |
20DL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 19 |
20FL2C48A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 20 |
20FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 21 |
21050 |
21050 PCI-to-PCI Bridge Hardware Implementation Application Note |
Intel |
| 22 |
2FWJ42M |
SCHOTTKY BARRIER RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION |
TOSHIBA |
| 23 |
2GWJ2C42 |
SCHOTTKY BARRIER RECTIFIER STACK SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 24 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
| 25 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 26 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 27 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
| 28 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 29 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 30 |
2N5071 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
| | | |
