No. |
Part Name |
Description |
Manufacturer |
1 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
2 |
13003BR |
NPN SILICON TRANSISTOR |
Wing Shing Computer Components |
3 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
4 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
5 |
181T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
6 |
182T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
7 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
8 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
9 |
183T2 |
180V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
10 |
184T2 |
200V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
11 |
185T2 |
250V NPN silicon transistot, diffused mesa |
Comset Semiconductors |
12 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
13 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
14 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
15 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
16 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
17 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
18 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
19 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
20 |
25A1400-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
21 |
2DD2150R |
NPN SURFACE MOUNT TRANSISTOR |
Diodes |
22 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
23 |
2N1420 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
24 |
2N1479 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
25 |
2N1480 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
26 |
2N1481 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
27 |
2N1482 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
28 |
2N1487 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
29 |
2N1488 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
30 |
2N1489 |
Silicon NPN single diffused low frequency power transistor |
IPRS Baneasa |
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