| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0-1462000-1 |
2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
Tyco Electronics |
| 2 |
0-1462000-7 |
2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
Tyco Electronics |
| 3 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 4 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 5 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 6 |
1-1462000-3 |
2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
Tyco Electronics |
| 7 |
1-1462000-8 |
2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
Tyco Electronics |
| 8 |
1-1462001-1 |
2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
Tyco Electronics |
| 9 |
1-1462001-2 |
2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil |
Tyco Electronics |
| 10 |
1.5SMC220A |
SMD Transient Suppressor Single: 1500W Uni-polar |
Central Semiconductor |
| 11 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 12 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 14 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 15 |
1MB12-140 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 16 |
1MBH60-100 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 17 |
1MBH60D-090A |
IGBT INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
| 18 |
1N1115R |
Diffused Silicon Rectifier 2.5A 100V, reverse polarity |
Texas Instruments |
| 19 |
1N1116R |
Diffused Silicon Rectifier 2.5A 200V, reverse polarity |
Texas Instruments |
| 20 |
1N1117R |
Diffused Silicon Rectifier 2.5A 300V, reverse polarity |
Texas Instruments |
| 21 |
1N1118R |
Diffused Silicon Rectifier 2.5A 400V, reverse polarity |
Texas Instruments |
| 22 |
1N1119R |
Diffused Silicon Rectifier 2.5A 500V, reverse polarity |
Texas Instruments |
| 23 |
1N1120R |
Diffused Silicon Rectifier 2.5A 600V, reverse polarity |
Texas Instruments |
| 24 |
1N1124AR |
Diffused Silicon Rectifier 3.3A 200V, reverse polarity |
Texas Instruments |
| 25 |
1N1124R |
Diffused Silicon Rectifier 3A 200V, reverse polarity |
Texas Instruments |
| 26 |
1N1125AR |
Diffused Silicon Rectifier 3.3A 300V, reverse polarity |
Texas Instruments |
| 27 |
1N1125R |
Diffused Silicon Rectifier 3A 300V, reverse polarity |
Texas Instruments |
| 28 |
1N1126AR |
Diffused Silicon Rectifier 3.3A 400V, reverse polarity |
Texas Instruments |
| 29 |
1N1126R |
Diffused Silicon Rectifier 3A 400V, reverse polarity |
Texas Instruments |
| 30 |
1N1127AR |
Diffused Silicon Rectifier 3.3A 500V, reverse polarity |
Texas Instruments |
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