No. |
Part Name |
Description |
Manufacturer |
1 |
FJC1308PTF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
2 |
FJC1386PTF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
3 |
MBM29DL161BD12PTFR |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
4 |
MBM29DL161BD70PTFR |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
5 |
MBM29DL161BD90PTFR |
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation |
Fujitsu Microelectronics |
6 |
PBYR3035PTF |
Rectifier diodes schottky barrier |
Philips |
7 |
PBYR3040PTF |
Rectifier diodes schottky barrier |
Philips |
8 |
PBYR3045PTF |
Rectifier diodes schottky barrier |
Philips |
9 |
PTF |
Industrial, Very Low Noise and Voltage Coefficient, Small Package, 100% Laser Spiraled, Very Good High Frequency Characteristics, Acceptance Testing Available, Can Replace Wirewound Bobbins, Superior Moisture Protection |
Vishay |
10 |
PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
11 |
PTF080101S |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
12 |
PTF080451 |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz |
Infineon |
13 |
PTF080451E |
LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz |
Infineon |
14 |
PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
15 |
PTF080601A |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
16 |
PTF080601E |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
17 |
PTF080601F |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
18 |
PTF080901 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
19 |
PTF080901E |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
20 |
PTF080901F |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
21 |
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
22 |
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
23 |
PTF10015 |
50 Watts, 300�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
24 |
PTF10019 |
70 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
25 |
PTF10020 |
125 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
26 |
PTF10021 |
30 Watts, 1.4�1.6 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
27 |
PTF10031 |
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
28 |
PTF10036 |
85 Watts, 860�960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
29 |
PTF10043 |
12 Watts, 1.9�2.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
30 |
PTF10045 |
30 Watts, 1.60�1.65 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
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