| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BPY70 |
Silicon N/P photoelements with antireflex surface coating |
AEG-TELEFUNKEN |
| 2 |
BPY71 |
Silicon N/P photoelements with antireflex surface coating |
AEG-TELEFUNKEN |
| 3 |
BPY72 |
Silicon N/P photoelements with antireflex surface coating |
AEG-TELEFUNKEN |
| 4 |
BPY77 |
Photodiode |
Mullard |
| 5 |
BPY78 |
Silicon planar photothyristor tetrode (SCS) |
AEG-TELEFUNKEN |
| 6 |
BPY79 |
Silicon photo voltaic cell |
AEG-TELEFUNKEN |
| 7 |
RPY71 |
CdS cell |
mble |
| 8 |
RPY71 |
Cadmium sulphide photoconductive cells |
Mullard |
| 9 |
RPY75 |
Infrared photoconductive detector, lead sulphide detector for room temperature operation |
Mullard |
| 10 |
RPY75A |
Infrared photoconductive detector, lead sulphide detector for room temperature operation |
Mullard |
| 11 |
RPY76 |
Infrared photoconductive detector, lead sulphide detector for room temperature operation |
Mullard |
| 12 |
RPY76A |
Infrared detector |
mble |
| 13 |
RPY76A |
Infrared photoconductive detector, lead sulphide detector for room temperature operation |
Mullard |
| 14 |
RPY77 |
Infrared photoconductive detector, indium antimonide labyrinth detector for room temperature operation |
Mullard |
| 15 |
RPY78 |
Infrared photoconductive detector, indium antimonide labyrinth detector for room temperature operation |
Mullard |
| 16 |
RPY79 |
Infrared photoconductive detector, indium antimonide labyrinth detector for room temperature operation |
Mullard |
| 17 |
ZPY7.5 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 18 |
ZPY7.5 |
ZENER DIODES |
General Semiconductor |
| 19 |
ZPY7.5 |
Diode Zener Single 7.45V 5% 1.3W 2-Pin DO-41 T/R |
New Jersey Semiconductor |
| 20 |
ZPY75 |
SILICON PLANAR POWER ZENER DIODE |
Diodes |
| 21 |
ZPY75 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 22 |
ZPY75 |
ZENER DIODES |
General Semiconductor |
| 23 |
ZPY75 |
Diode Zener Single 75V 6% 1.3W 2-Pin DO-41 |
New Jersey Semiconductor |
| | | |
