No. |
Part Name |
Description |
Manufacturer |
1 |
8Q512K32 |
16Megabit SRAM MCM |
Aeroflex Circuit Technology |
2 |
9Q512K32 |
UT9Q512K32 16Megabit SRAM MCM |
Aeroflex Circuit Technology |
3 |
9Q512K32 |
UT9Q512K32 16Megabit SRAM MCM |
Aeroflex Circuit Technology |
4 |
BQ51221 |
Dual Mode 5-W (WPC and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 85 |
Texas Instruments |
5 |
BQ51221YFPR |
Dual Mode 5-W (WPC and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 85 |
Texas Instruments |
6 |
BQ51221YFPT |
Dual Mode 5-W (WPC and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 85 |
Texas Instruments |
7 |
BQ51222 |
Dual Mode 5-W (WPC v1.2 and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 125 |
Texas Instruments |
8 |
BQ51222YFPR |
Dual Mode 5-W (WPC v1.2 and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 125 |
Texas Instruments |
9 |
BQ51222YFPT |
Dual Mode 5-W (WPC v1.2 and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 125 |
Texas Instruments |
10 |
TQ5121 |
3V Cellular TDMA/AMPS LNA/mixer Receiver IC |
TriQuint Semiconductor |
11 |
TQ5122 |
3V Cellular TDMA/AMPS Receiver IC With Power-Down |
TriQuint Semiconductor |
12 |
UT7Q512 |
512K x 8 SRAM |
Aeroflex Circuit Technology |
13 |
UT7Q512K-UCA |
512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
14 |
UT7Q512K-UCC |
512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold. |
Aeroflex Circuit Technology |
15 |
UT7Q512K-UCX |
512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option. |
Aeroflex Circuit Technology |
16 |
UT7Q512K-UPA |
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
17 |
UT7Q512K-UPC |
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold. |
Aeroflex Circuit Technology |
18 |
UT7Q512K-UPX |
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. |
Aeroflex Circuit Technology |
19 |
UT7Q512K-UWC |
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold. |
Aeroflex Circuit Technology |
20 |
UT8Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V. |
Aeroflex Circuit Technology |
21 |
UT8Q512-20ICA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. |
Aeroflex Circuit Technology |
22 |
UT8Q512-20ICC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. |
Aeroflex Circuit Technology |
23 |
UT8Q512-20ICX |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. |
Aeroflex Circuit Technology |
24 |
UT8Q512-20IPC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
25 |
UT8Q512-20IWA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
26 |
UT8Q512-20IWC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
27 |
UT8Q512-20IWX |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
28 |
UT8Q512-20UCA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. |
Aeroflex Circuit Technology |
29 |
UT8Q512-20UCC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. |
Aeroflex Circuit Technology |
30 |
UT8Q512-20UCX |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. |
Aeroflex Circuit Technology |
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