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Datasheets for Q512

Datasheets found :: 88
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
1 8Q512K32 16Megabit SRAM MCM Aeroflex Circuit Technology
2 9Q512K32 UT9Q512K32 16Megabit SRAM MCM Aeroflex Circuit Technology
3 9Q512K32 UT9Q512K32 16Megabit SRAM MCM Aeroflex Circuit Technology
4 BQ51221 Dual Mode 5-W (WPC and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 85 Texas Instruments
5 BQ51221YFPR Dual Mode 5-W (WPC and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 85 Texas Instruments
6 BQ51221YFPT Dual Mode 5-W (WPC and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 85 Texas Instruments
7 BQ51222 Dual Mode 5-W (WPC v1.2 and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 125 Texas Instruments
8 BQ51222YFPR Dual Mode 5-W (WPC v1.2 and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 125 Texas Instruments
9 BQ51222YFPT Dual Mode 5-W (WPC v1.2 and PMA) Single Chip Wireless Power Receiver 42-DSBGA -40 to 125 Texas Instruments
10 TQ5121 3V Cellular TDMA/AMPS LNA/mixer Receiver IC TriQuint Semiconductor
11 TQ5122 3V Cellular TDMA/AMPS Receiver IC With Power-Down TriQuint Semiconductor
12 UT7Q512 512K x 8 SRAM Aeroflex Circuit Technology
13 UT7Q512K-UCA 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped. Aeroflex Circuit Technology
14 UT7Q512K-UCC 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold. Aeroflex Circuit Technology
15 UT7Q512K-UCX 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option. Aeroflex Circuit Technology
16 UT7Q512K-UPA 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish hot solder dipped. Aeroflex Circuit Technology
17 UT7Q512K-UPC 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold. Aeroflex Circuit Technology
18 UT7Q512K-UPX 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. Aeroflex Circuit Technology
19 UT7Q512K-UWC 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold. Aeroflex Circuit Technology
20 UT8Q512 512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V. Aeroflex Circuit Technology
21 UT8Q512-20ICA 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. Aeroflex Circuit Technology
22 UT8Q512-20ICC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. Aeroflex Circuit Technology
23 UT8Q512-20ICX 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. Aeroflex Circuit Technology
24 UT8Q512-20IPC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. Aeroflex Circuit Technology
25 UT8Q512-20IWA 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. Aeroflex Circuit Technology
26 UT8Q512-20IWC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. Aeroflex Circuit Technology
27 UT8Q512-20IWX 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. Aeroflex Circuit Technology
28 UT8Q512-20UCA 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. Aeroflex Circuit Technology
29 UT8Q512-20UCC 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. Aeroflex Circuit Technology
30 UT8Q512-20UCX 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. Aeroflex Circuit Technology


Datasheets found :: 88
Page: | 1 | 2 | 3 |



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