No. |
Part Name |
Description |
Manufacturer |
1 |
27C16Q550 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
2 |
DS21Q55 |
Quad T1/E1/J1 Transceiver |
MAXIM - Dallas Semiconductor |
3 |
DS21Q552 |
Quad T1 Transceiver (5V/3.3V) |
Dallas Semiconductor |
4 |
DS21Q552 |
Quad T1/E1 Transceiver (3.3V,5.0V) |
MAXIM - Dallas Semiconductor |
5 |
DS21Q552+ |
Quad T1/E1 Transceiver (3.3V, 5.0V) |
MAXIM - Dallas Semiconductor |
6 |
DS21Q552B |
Quad T1/E1 Transceiver (3.3V, 5.0V) |
MAXIM - Dallas Semiconductor |
7 |
DS21Q552N |
Quad T1 Transceiver (5V/3.3V) |
Dallas Semiconductor |
8 |
DS21Q554 |
Quad E1 Transceiver (5V/3.3V) |
Dallas Semiconductor |
9 |
DS21Q554 |
Quad T1/E1 Transceiver (3.3V,5.0V) |
MAXIM - Dallas Semiconductor |
10 |
DS21Q554B |
Quad T1/E1 Transceiver (3.3V, 5.0V) |
MAXIM - Dallas Semiconductor |
11 |
DS21Q554B+ |
Quad T1/E1 Transceiver (3.3V, 5.0V) |
MAXIM - Dallas Semiconductor |
12 |
DS21Q554BN+ |
Quad T1/E1 Transceiver (3.3V, 5.0V) |
MAXIM - Dallas Semiconductor |
13 |
DS21Q554N |
Quad E1 Transceiver (5V/3.3V) |
Dallas Semiconductor |
14 |
DS21Q554N |
Quad T1/E1 Transceiver (3.3V, 5.0V) |
MAXIM - Dallas Semiconductor |
15 |
DS21Q55DK |
Quad T1/E1/J1 Transceiver Design Kit Daughter Card |
MAXIM - Dallas Semiconductor |
16 |
DS21Q55N |
Quad T1/E1/J1 Transceiver |
MAXIM - Dallas Semiconductor |
17 |
ILQ55 |
PHOTODARLINGTON OPTOCOUPLER |
Siemens |
18 |
ILQ55 |
Optocoupler, Photodarlington Output (Single, Dual, Quad Channel) |
Vishay |
19 |
ILQ55-X007 |
Optocouplers |
Vishay |
20 |
ILQ55-X009 |
Optocouplers |
Vishay |
21 |
K6X0808C1D-GQ55 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
22 |
K6X0808C1D-TQ55 |
32Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
23 |
K6X1008C2D-GQ55 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
24 |
K6X1008C2D-TQ55 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
25 |
K6X4008C1F-GQ55 |
512Kx8 bit Low Power full CMOS Static RAM |
Samsung Electronic |
26 |
K6X4008C1F-VQ55 |
512Kx8 bit Low Power full CMOS Static RAM |
Samsung Electronic |
27 |
K6X4016C3F-TQ55 |
256Kx16 bit Low Power full CMOS Static RAM |
Samsung Electronic |
28 |
K6X8008C2B-TQ55 |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
29 |
R3111Q551A-TR |
Low voltage detector. Detector threshold (-Vdet) 5.5V. Output type: Nch open drain. Standard taping specification TR |
Ricoh |
30 |
R3111Q551C-TR |
Low voltage detector. Detector threshold (-Vdet) 5.5V. Output type: CMOS. Standard taping specification TR |
Ricoh |
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