No. |
Part Name |
Description |
Manufacturer |
1 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
2 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
3 |
12FD12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
4 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
5 |
15FC11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
6 |
15FD11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
7 |
15KP30 |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
8 |
15KP30A |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
9 |
15KP30C |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
10 |
15KP30CA |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
11 |
15KP33 |
Diode TVS Single Uni-Dir 33V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
12 |
15KP33A |
Diode TVS Single Uni-Dir 33V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
13 |
15KP33C |
Diode TVS Single Bi-Dir 33V 15KW |
New Jersey Semiconductor |
14 |
15KP33CA |
Diode TVS Single Bi-Dir 33V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
15 |
15KP36 |
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
16 |
15KP36A |
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
17 |
15KP36C |
Diode TVS Single Bi-Dir 36V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
18 |
15KP36CA |
Diode TVS Single Bi-Dir 36V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
19 |
15KPA30 |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
20 |
15KPA30A |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
21 |
15KPA30C |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
22 |
15KPA30CA |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
23 |
15KPA33 |
Diode TVS Single Uni-Dir 33V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
24 |
15KPA33A |
Diode TVS Single Uni-Dir 33V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
25 |
15KPA33C |
Diode TVS Single Bi-Dir 33V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
26 |
15KPA33CA |
Diode TVS Single Bi-Dir 33V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
27 |
15KPA36 |
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
28 |
15KPA36A |
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
29 |
15KPA36C |
Diode TVS Single Bi-Dir 36V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
30 |
15KPA36CA |
Diode TVS Single Bi-Dir 36V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| | | |