| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 2 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 3 |
12FD12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 4 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
| 5 |
15FC11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 6 |
15FD11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 7 |
15KP30 |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 8 |
15KP30A |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 9 |
15KP30C |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 10 |
15KP30CA |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 11 |
15KPA30 |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 12 |
15KPA30A |
Diode TVS Single Uni-Dir 30V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 13 |
15KPA30C |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 14 |
15KPA30CA |
Diode TVS Single Bi-Dir 30V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 15 |
1600FD21 |
Silicon alloy-diffused junction rectifier 300V 1600A |
TOSHIBA |
| 16 |
1600FXD22 |
Silicon alloy-diffused junction rectifier 3000V 1600A |
TOSHIBA |
| 17 |
1N1733 |
High-voltage silicon rectifier 3000V |
Motorola |
| 18 |
1N3882 |
6A Fast-Recovery Silicon Rectifier 300V |
RCA Solid State |
| 19 |
1N3892 |
12A Fast-Recovery Silicon Rectifier 300V |
RCA Solid State |
| 20 |
1N3892R |
12A Fast-Recovery Silicon Rectifier 300V, reverse polarity |
RCA Solid State |
| 21 |
1N3902 |
20A Fast-Recovery Silicon Rectifier 300V |
RCA Solid State |
| 22 |
1N3902R |
20A Fast-Recovery Silicon Rectifier 300V, reverse polarity |
RCA Solid State |
| 23 |
1N3912 |
30A Fast-Recovery Silicon Rectifier 300V |
RCA Solid State |
| 24 |
1N3912R |
30A Fast-Recovery Silicon Rectifier 300V reverse polarity |
RCA Solid State |
| 25 |
1N5363B |
Zener 30V 5W 5% |
ON Semiconductor |
| 26 |
1N5363BRL |
Zener 30V 5W 5% |
ON Semiconductor |
| 27 |
1N5394 |
1.5A Silicon Rectifier 300V |
RCA Solid State |
| 28 |
1N5555 |
Diode TVS Single Uni-Dir 30.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 29 |
1N5610 |
Diode TVS Single Uni-Dir 30.5V 1.5KW 2-Pin Case G |
New Jersey Semiconductor |
| 30 |
1N5646A |
Diode TVS Single Uni-Dir 30.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| | | |
