| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6122 |
Diode TVS Single Bi-Dir 35.8V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 2 |
1N6122A |
Diode TVS Single Bi-Dir 35.8V 500W 2-Pin |
New Jersey Semiconductor |
| 3 |
1N6158 |
Diode TVS Single Bi-Dir 35.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 4 |
1N6158A |
Diode TVS Single Bi-Dir 35.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 5 |
2N3583 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
| 6 |
2N3584 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 7 |
2N3585 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 8 |
2N4240 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 9 |
2N6211 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
| 10 |
2N6212 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
| 11 |
2N6213 |
2A silicon medium-power, High-Voltage PNP transistor 35W |
Motorola |
| 12 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
| 13 |
2N6421 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 14 |
2N6422 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 15 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
| 16 |
2N7006 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 0.32A |
Siliconix |
| 17 |
300LD11 |
Silicon alloy diffused junction rectifier 350A 800V |
TOSHIBA |
| 18 |
300ND11 |
Silicon alloy diffused junction rectifier 350A 1000V |
TOSHIBA |
| 19 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
| 20 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
| 21 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
| 22 |
300YD11 |
Silicon alloy diffused junction rectifier 350A 2000V |
TOSHIBA |
| 23 |
30KP350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 24 |
30KP350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 25 |
30KPA350 |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 26 |
30KPA350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 27 |
30KPA350C |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 28 |
30KPA350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 29 |
AD8038AKS-REEL |
Low Power 350 MHz Voltage Feedback Amplifiers |
Analog Devices |
| 30 |
AD8038AKS-REEL7 |
Low Power 350 MHz Voltage Feedback Amplifiers |
Analog Devices |
| | | |
