| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0002 |
HIGH SPEED, BUFFER AMPLIFIER AMP |
M.S. Kennedy Corp. |
| 2 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 3 |
151911207-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 4 |
152911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 5 |
1738U |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 6 |
1738UAA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 7 |
1738UBA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 8 |
1738UCA |
Small form-ractor erbium-doped fiber amplifier with uncooled pump. Connector FC/APC. Electrical connection: male 2 x 10 at 2 mm spacing. |
Agere Systems |
| 9 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 10 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 11 |
2N1561 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 12 |
2N1562 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 13 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 14 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 15 |
2N1692 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 16 |
2N1693 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
| 17 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 18 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 19 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 20 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 21 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 22 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 23 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 24 |
2N2906 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 25 |
2N2906A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 26 |
2N2907 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 27 |
2N2907A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 28 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 29 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 30 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| | | |
