No. |
Part Name |
Description |
Manufacturer |
1 |
2513 |
64 X 8 X 5 Character generator |
Signetics |
2 |
2513I |
64 X 8 X 5 Character generator |
Signetics |
3 |
2513N |
64 X 8 X 5 Character generator |
Signetics |
4 |
2516 |
64 X 8 X 5 static character generator |
Signetics |
5 |
2516I |
64 X 8 X 5 static character generator |
Signetics |
6 |
2516N |
64 X 8 X 5 static character generator |
Signetics |
7 |
2526 |
64 x 9 x 9 ROM Static character generator |
Signetics |
8 |
2526I |
64 x 9 x 9 ROM Static character generator |
Signetics |
9 |
2526N |
64 x 9 x 9 ROM Static character generator |
Signetics |
10 |
2N5016 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
11 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
12 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
13 |
AN-3755 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
14 |
AN30221A |
For color TFT-LCD - monolithic bipolar IC for generating gradation voltage for liquid crystal |
Panasonic |
15 |
AT90SC19236RT |
Low-power, High performance 8-bit/16-bit secure microcontroller with 192K Byte ROM, 36K Byte EEPROM programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out |
Atmel |
16 |
AT90SC19272RC |
Low-power, high-performance, 8-/16-bit secure microcontroller with 192K Byte ROM and 72K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side chan |
Atmel |
17 |
AT90SC25672R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe |
Atmel |
18 |
AT90SC25672RT |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe |
Atmel |
19 |
AT90SC4802R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 48K Byte ROM, 2K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
20 |
AT90SC4816RS |
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann |
Atmel |
21 |
AT90SC6404R |
Low-power, High Performance 8-bit/16-bit secure microcontroller with 64K Byte ROM, 4K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
22 |
AT90SC9608RC |
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 8K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
23 |
AT90SC9636R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 36K Byte EEPROM, programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out |
Atmel |
24 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
25 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
26 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
27 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
28 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
29 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
30 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| | | |