| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 2 |
2N3866 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 3 |
2N4427 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 4 |
2SC1199 |
Silicon NPN epitaxial planar high frequency low noise transistor |
TOSHIBA |
| 5 |
2SC4258 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
Isahaya Electronics Corporation |
| 6 |
2SC5336 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 7 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 8 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 9 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 10 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 11 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 12 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 13 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 14 |
3SK135A-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 15 |
3SK135A-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 16 |
3SK177-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 17 |
3SK177-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 18 |
550D |
Solid Tantalum Capacitors, Solid-Electrolyte TANTALEX®, for High Frequency Power Supplies, Hermetically Sealed, Low ESR, Axial Leads |
Vishay |
| 19 |
94SC |
General Use Capacitor with Superior High Frequency Characteristics Suitable for use in Noise Limiters and Switching Power Supplies |
Vishay |
| 20 |
AN250 |
A SECOND GENERATION IC SWITCH MODE CONTROLLER OPTIMIZED FOR HIGH FREQUENCY |
SGS Thomson Microelectronics |
| 21 |
AN881 |
LOW COST ACTIVE CLAMP FOR HIGH FREQUENCY APPLICATIONS |
SGS Thomson Microelectronics |
| 22 |
BFR10 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 23 |
BFR11 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 24 |
BFR36 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 25 |
BFR37 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 26 |
BFR38 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 27 |
BFR90 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 28 |
BFR91 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 29 |
BFR96 |
Transistor for high frequency amplifiers |
SGS-ATES |
| 30 |
BFR97 |
Transistor for high frequency amplifiers |
SGS-ATES |
| | | |
