No. |
Part Name |
Description |
Manufacturer |
1 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
2 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
3 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
4 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
5 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
6 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
7 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
8 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
9 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
10 |
1951A |
Medium Power Microwave MESFET |
Mitsubishi Electric Corporation |
11 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
12 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
13 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
14 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
15 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
16 |
2SA1977 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
17 |
2SA1978 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |
NEC |
18 |
2SC1193 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
19 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
20 |
2SC1236 |
Silicon NPN epitaxial planar microwave transistor |
TOSHIBA |
21 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
22 |
2SC2952 |
NPN medium power microwave transistor (This datasheet of NE24615 is also the datasheet of 2SC2952, see the Electrical Characteristics table) |
NEC |
23 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
24 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
25 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
26 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
27 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
28 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
29 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
30 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
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