No. |
Part Name |
Description |
Manufacturer |
1 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
2 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
3 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
4 |
2-BC288 |
Pair Silicon planar NPN transistor |
SGS-ATES |
5 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
6 |
2N2017 |
Medium Power NPN Transistor |
National Semiconductor |
7 |
2N2102 |
Medium Power NPN Transistor |
National Semiconductor |
8 |
2N2192 |
Medium Power NPN Transistor |
National Semiconductor |
9 |
2N2192A |
Medium Power NPN Transistor |
National Semiconductor |
10 |
2N2193 |
Medium Power NPN Transistor |
National Semiconductor |
11 |
2N2193A |
Medium Power NPN Transistor |
National Semiconductor |
12 |
2N2195 |
Medium Power NPN Transistor |
National Semiconductor |
13 |
2N2195A |
Medium Power NPN Transistor |
National Semiconductor |
14 |
2N2196 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
15 |
2N2197 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
16 |
2N2243 |
Medium Power NPN Transistor |
National Semiconductor |
17 |
2N2243A |
Medium Power NPN Transistor |
National Semiconductor |
18 |
2N2270 |
Medium Power NPN Transistor |
National Semiconductor |
19 |
2N2657 |
Medium Power NPN Transistor |
National Semiconductor |
20 |
2N2658 |
Medium Power NPN Transistor |
National Semiconductor |
21 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
22 |
2N2890 |
Medium Power NPN Transistor |
National Semiconductor |
23 |
2N2891 |
Medium Power NPN Transistor |
National Semiconductor |
24 |
2N3019 |
Medium Power NPN Transistor |
National Semiconductor |
25 |
2N3019 J |
Medium Power NPN Transistor |
National Semiconductor |
26 |
2N3019 JTX |
Medium Power NPN Transistor |
National Semiconductor |
27 |
2N3019 JTXV |
Medium Power NPN Transistor |
National Semiconductor |
28 |
2N3020 |
Medium Power NPN Transistor |
National Semiconductor |
29 |
2N3053 |
Medium Power NPN Transistor |
National Semiconductor |
30 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| | | |