| No. |
Part Name |
Description |
Manufacturer |
| 1 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 2 |
2N2196 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 3 |
2N2197 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 4 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 5 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 6 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 7 |
2N3439 |
Power NPN transistor Triple Diffused - Fast switching |
SESCOSEM |
| 8 |
2N3440 |
Power NPN transistor Triple Diffused - Fast switching |
SESCOSEM |
| 9 |
2N3584 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 10 |
2N3585 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 11 |
2N3600 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 12 |
2N3738 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 13 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 14 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 15 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 16 |
2N4240 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 17 |
2N4400 |
Medium power NPN transistor |
FERRANTI |
| 18 |
2N4401 |
Medium power NPN transistor |
FERRANTI |
| 19 |
2N4401SC |
EPITAXIAL PLANAR NPN TRANSISTOR |
Korea Electronics (KEC) |
| 20 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 21 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 22 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 23 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 24 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 25 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 26 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 27 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 28 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 29 |
2N5629 |
16A power NPN transistor complementary silicon 200W |
Motorola |
| 30 |
2N5632 |
10A complementary silicon high-voltage, high-power NPN transistor 150W |
Motorola |
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