No. |
Part Name |
Description |
Manufacturer |
1 |
1N3558 |
Matched Pair of 1N751A Zener Diode |
Motorola |
2 |
24AA164 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24AA16 Instead. |
Microchip |
3 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
4 |
24C08B |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LCO8B Instead The 24C01B is an 8K bit Electrically Erasable PROM memory organized as four blocks of 256 x 8-bit with an I
Microchip | |
5 |
24FC32 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 Instead |
Microchip |
6 |
24FC65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 |
Microchip |
7 |
24LC09 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is an 8-Kbit Electrically Erasable PROM (EEPROM) that is designed with a custom device address to meet the requir |
Microchip |
8 |
24LC09-I/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
9 |
24LC09-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
10 |
24LC09T-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
11 |
24LC21 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 is a 128 x 8-bit Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of toda |
Microchip |
12 |
24LC21-I/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
13 |
24LC21-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
14 |
24LC21/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
15 |
24LC21/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
16 |
24LC21T-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
17 |
24LC21T/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
18 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
19 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
20 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
21 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
22 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
23 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
24 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
25 |
2SA640 |
PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER |
NEC |
26 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
27 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
28 |
2SA733R |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
29 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
30 |
2SA9012 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH PULL OPERATION |
USHA India LTD |
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