No. |
Part Name |
Description |
Manufacturer |
1 |
1N3558 |
Matched Pair of 1N751A Zener Diode |
Motorola |
2 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
3 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
4 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
5 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
6 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
7 |
2SA640 |
PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER |
NEC |
8 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
9 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
10 |
2SA733R |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
11 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
12 |
2SA9012 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH PULL OPERATION |
USHA India LTD |
13 |
2SA983 |
Application Note - Typical application - RF amplifier of UHF TV tuner |
NEC |
14 |
2SB1117 |
Suitable for driver of solenoid or motor, or electronic flash |
NEC |
15 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
16 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
17 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
18 |
2SC9013 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |
USHA India LTD |
19 |
2SC9018 |
AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER |
USHA India LTD |
20 |
2SK1109 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
21 |
2SK4027 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
22 |
2SK4028 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
23 |
2SK660 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
24 |
AA113 |
Tungsten point contact germanium diode - detection, 2AA113 matched pair of AA113 |
SESCOSEM |
25 |
AA119 |
Tungsten point contact germanium diode - detection, 2AA119 matched pair of AA119 |
SESCOSEM |
26 |
AGM1264B-FEBBD-T |
0.3-7.0V; 1.8mA; number of dots: 128 x 64dots; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; AZ display |
AZ Displays |
27 |
AGM1264B-FEBBH-T |
0.3-7.0V; 1.8mA; number of dots: 128 x 64dots; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; AZ display |
AZ Displays |
28 |
AGM1264B-FEBBS-T |
0.3-7.0V; 1.8mA; number of dots: 128 x 64dots; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; AZ display |
AZ Displays |
29 |
AGM1264B-FEBBW-T |
0.3-7.0V; 1.8mA; number of dots: 128 x 64dots; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; AZ display |
AZ Displays |
30 |
AGM1264B-FEBTD-T |
0.3-7.0V; 1.8mA; number of dots: 128 x 64dots; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; AZ display |
AZ Displays |
| | | |