No. |
Part Name |
Description |
Manufacturer |
1 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
2 |
10112 |
Dual 3-Input 1 OR/2 NOR Output Gate |
Signetics |
3 |
10112B |
Dual 3-Input 1 OR/2 NOR Output Gate |
Signetics |
4 |
10112F |
Dual 3-Input 1 OR/2 NOR Output Gate |
Signetics |
5 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
6 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
7 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
8 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
9 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
10 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
11 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
12 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
13 |
2N322 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
14 |
2N323 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
15 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
16 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
17 |
2N508 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
18 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
19 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
20 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
21 |
2SA565 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
22 |
2SA566 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
23 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
24 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
25 |
2SB331H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
26 |
2SB332H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
27 |
2SB333H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
28 |
2SB334H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching |
Hitachi Semiconductor |
29 |
2SB337 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
30 |
2SB337 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
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