No. |
Part Name |
Description |
Manufacturer |
1 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
2 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
3 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
4 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
5 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
6 |
2N4427 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
7 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
8 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
9 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
10 |
2SA1988 |
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE |
NEC |
11 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
12 |
2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
13 |
2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
14 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
15 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
16 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
17 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
18 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
19 |
2SC2922 |
Transistor For Power Amplifier |
Sanken |
20 |
2SC3733 |
NPN transistor for power amplifier and high speed switching applications |
NEC |
21 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
22 |
2SC481 |
Silicon NPN epitaxial planar transistor, 27-50MHz transceiver power amplifier applications |
TOSHIBA |
23 |
2SC4883A |
Transistor For Power Amplifier |
Sanken |
24 |
ABC900-30E |
Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications |
Motorola |
25 |
ABC900-30U |
Linear Power Amplifier 30W 870-896MHz, specifically designed for cellular radio base station applications |
Motorola |
26 |
ABC900-60E |
Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications |
Motorola |
27 |
AM55-0004 |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
28 |
AM55-0004 |
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz |
Tyco Electronics |
29 |
AM55-0004RTR |
1.8-2 GHz, 250 mW linear power amplifier and T/R switch |
MA-Com |
30 |
AM55-0004RTR |
250 mW Linear Power Amplifier and T/R Switch 1.8 - 2.0 GHz |
Tyco Electronics |
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