No. |
Part Name |
Description |
Manufacturer |
1 |
1N4001-G |
General Purpose Rectifier, VRRM=50V, VR=50V, IO=1A |
Comchip Technology |
2 |
1N4002-G |
General Purpose Rectifier, VRRM=100V, VR=100V, IO=1A |
Comchip Technology |
3 |
1N4003-G |
General Purpose Rectifier, VRRM=200V, VR=200V, IO=1A |
Comchip Technology |
4 |
1N4004-G |
General Purpose Rectifier, VRRM=400V, VR=400V, IO=1A |
Comchip Technology |
5 |
1N4005-G |
General Purpose Rectifier, VRRM=600V, VR=600V, IO=1A |
Comchip Technology |
6 |
1N4006-G |
General Purpose Rectifier, VRRM=800V, VR=800V, IO=1A |
Comchip Technology |
7 |
1N4007-G |
General Purpose Rectifier, VRRM=1000V, VR=1000V, IO=1A |
Comchip Technology |
8 |
1N5400-G |
General Purpose Rectifier, VRRM=50V, VR=50V, IO=3A |
Comchip Technology |
9 |
1N5401-G |
General Purpose Rectifier, VRRM=100V, VR=100V, IO=3A |
Comchip Technology |
10 |
1N5402-G |
General Purpose Rectifier, VRRM=200V, VR=200V, IO=3A |
Comchip Technology |
11 |
1N5404-G |
General Purpose Rectifier, VRRM=400V, VR=400V, IO=3A |
Comchip Technology |
12 |
1N5406-G |
General Purpose Rectifier, VRRM=600V, VR=600V, IO=3A |
Comchip Technology |
13 |
1N5407-G |
General Purpose Rectifier, VRRM=800V, VR=800V, IO=3A |
Comchip Technology |
14 |
1N5408-G |
General Purpose Rectifier, VRRM=1000V, VR=1000V, IO=3A |
Comchip Technology |
15 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
16 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
17 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
18 |
2N2865 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
19 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
20 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
21 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
22 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
23 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
24 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
25 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
26 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
27 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
28 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
29 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
30 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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