| No. |
Part Name |
Description |
Manufacturer |
| 1 |
A62L256R-55LL |
32K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
| 2 |
A62L256R-55LLU |
32K X 8 BIT LOW VOLTAGE CMOS SRAM |
AMIC Technology |
| 3 |
AT27C256R-55 |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 4 |
AT27C256R-55JC |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 5 |
AT27C256R-55JI |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 6 |
AT27C256R-55PC |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 7 |
AT27C256R-55PI |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 8 |
AT27C256R-55RC |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 9 |
AT27C256R-55RI |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 10 |
AT27C256R-55TC |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 11 |
AT27C256R-55TI |
256K 32K x 8 OTP CMOS EPROM |
Atmel |
| 12 |
AT27C512R-55 |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 13 |
AT27C512R-55JC |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 14 |
AT27C512R-55JI |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 15 |
AT27C512R-55PC |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 16 |
AT27C512R-55PI |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 17 |
AT27C512R-55RC |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 18 |
AT27C512R-55RI |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 19 |
AT27C512R-55TC |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 20 |
AT27C512R-55TI |
512K 64K x 8 OTP CMOS EPROM |
Atmel |
| 21 |
CAT28F102T14R-55T |
55ns 1M-bit CMOS flash memory |
Catalyst Semiconductor |
| 22 |
ERC |
Military/Established Reliability, MIL-R-55182 Qualified, Type RNC, Very Low Noise, Verified Failure Rate, 100% Stabilization and Screening Tests, Controlled Temperature Coefficient |
Vishay |
| 23 |
E_H |
QPL Wraparound Thin Film, MIL-R-55342 Characteristic E & H |
Vishay |
| 24 |
HFBR-5527 |
125 Megabaud Fiber Optic Transceiver JIS FO7 Connection |
Agilent (Hewlett-Packard) |
| 25 |
HMUA-16SR-55 |
MU Type Fiber Optic Connectors |
Hirose Electric |
| 26 |
HY29F040AR-55 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 27 |
HY29F040AR-55E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 28 |
HY29F040AR-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
| 29 |
K_M |
QPL Wraparound Thick Film, MIL-R-55342 Characteristic K & M |
Vishay |
| 30 |
M5M51008BKR-55L |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM |
Mitsubishi Electric Corporation |
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