No. |
Part Name |
Description |
Manufacturer |
1 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
2 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
3 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
4 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
5 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
6 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
7 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
8 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
9 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
10 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
11 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
12 |
2N7002 |
N-channel transistor. Drain-sourse voltage 60 V. |
Comchip Technology |
13 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
14 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
15 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
16 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
17 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
18 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
19 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
20 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
21 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
22 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
23 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
24 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
25 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
26 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
27 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
28 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
29 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
30 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
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