| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 2 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 3 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 4 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 5 |
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 6 |
CR08AS |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 7 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 8 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 9 |
CR08AS400-12 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 10 |
CR08AS400-8 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 11 |
CR08AS600-12 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 12 |
CR08AS600-8 |
Surface Mount, Phase Control SCR 0.8 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| | | |
