No. |
Part Name |
Description |
Manufacturer |
1 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
2 |
BCR10CM |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
3 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
4 |
BCR10CM-12 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
5 |
BCR10CM-12L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
6 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
7 |
BCR10CM-8 |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
8 |
BCR10CM-8L |
Triac 10 Amperes/400-600 Volts |
Powerex Power Semiconductors |
9 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
10 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
11 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
12 |
CR10C |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
13 |
CR10CY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| | | |