No. |
Part Name |
Description |
Manufacturer |
1 |
APT1001R1AVR |
POWER MOS V 1000V 9A 1.100 Ohm |
Advanced Power Technology |
2 |
AR1A3M |
Hybrid transistor |
NEC |
3 |
AR1A3M-T |
Hybrid transistor |
NEC |
4 |
AR1A3M-T/JD |
Hybrid transistor |
NEC |
5 |
AR1A3M-T/JM |
Hybrid transistor |
NEC |
6 |
AR1A3M/JD |
Hybrid transistor |
NEC |
7 |
AR1A3M/JM |
Hybrid transistor |
NEC |
8 |
AR1A4A |
Hybrid transistor |
NEC |
9 |
AR1A4A-T |
Hybrid transistor |
NEC |
10 |
AR1A4A-T/JD |
Hybrid transistor |
NEC |
11 |
AR1A4A-T/JM |
Hybrid transistor |
NEC |
12 |
AR1A4A/JD |
Hybrid transistor |
NEC |
13 |
AR1A4A/JM |
Hybrid transistor |
NEC |
14 |
AR1A4M |
Hybrid transistor |
NEC |
15 |
AR1A4M-T |
Hybrid transistor |
NEC |
16 |
AR1A4M-T/JD |
Hybrid transistor |
NEC |
17 |
AR1A4M-T/JM |
Hybrid transistor |
NEC |
18 |
AR1A4M/JD |
Hybrid transistor |
NEC |
19 |
AR1A4M/JM |
Hybrid transistor |
NEC |
20 |
BCR1AM |
Lead-Mount Triac 1 Ampere/400-600 Volts |
Powerex Power Semiconductors |
21 |
BCR1AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
22 |
BCR1AM-12 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
23 |
BCR1AM-12 |
Lead-Mount Triac 1 Ampere/400-600 Volts |
Powerex Power Semiconductors |
24 |
BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
25 |
BCR1AM-8 |
Lead-Mount Triac 1 Ampere/400-600 Volts |
Powerex Power Semiconductors |
26 |
BRF1A |
Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A |
Agere Systems |
27 |
BRF1A16E |
Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A |
Agere Systems |
28 |
BRF1A16E-TR |
Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A |
Agere Systems |
29 |
BRF1A16G |
Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A |
Agere Systems |
30 |
BRF1A16G-TR |
Quad Differential Receivers BRF1A, BRF2A, BRS2B, BRR1A, and BRT1A |
Agere Systems |
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