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Datasheets for R271

Datasheets found :: 34
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 K4R271669A Direct RDRAM Samsung Electronic
2 K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
3 K4R271669A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
4 K4R271669A-NB(M)CCG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
5 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
6 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
7 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
8 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
9 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
10 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
11 K4R271669B Direct RDRAM Samsung Electronic
12 K4R271669B Direct RDRAM� Data Sheet Samsung Electronic
13 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
14 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
15 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
16 K4R271669B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
17 K4R271669B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
18 K4R271669B-NB(M)CCK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
19 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
20 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
21 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
22 K4R271669D Direct RDRAM� Data Sheet Samsung Electronic
23 K4R271669D-T 128Mbit RDRAM(D-die) Samsung Electronic
24 K4R271669D-TCS8 128Mbit RDRAM(D-die) Samsung Electronic
25 K4R271669E 128Mbit RDRAM(E-die) Samsung Electronic
26 K4R271669F 128Mbit RDRAM(F-die) Samsung Electronic
27 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
28 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
29 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
30 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic


Datasheets found :: 34
Page: | 1 | 2 |



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