Datasheets for R441

Datasheets found :: 20 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	ADR441	Ultralow Noise, LDO XFET® 2.5V Voltage Reference w/Current Sink and Source	Analog Devices
2	FDR4410	N-Channel Enhancement Mode Field Effect Transistor	Fairchild Semiconductor
3	K4R441869A	Direct RDRAM	Samsung Electronic
4	K4R441869A-N(M)	K4R271669A-N(M):Direct RDRAM� Data Sheet	Samsung Electronic
5	K4R441869A-N(M)CG6	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
6	K4R441869A-N(M)CK7	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
7	K4R441869A-N(M)CK8	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
8	K4R441869AM-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung Electronic
9	K4R441869AM-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
10	K4R441869AM-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
11	K4R441869AN-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung Electronic
12	K4R441869AN-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
13	K4R441869AN-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
14	K4R441869B	Direct RDRAM	Samsung Electronic
15	K4R441869B	K4R271669B:Direct RDRAM� Data Sheet	Samsung Electronic
16	K4R441869B-N(M)CG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
17	K4R441869B-N(M)CK7	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
18	K4R441869B-N(M)CK8	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
19	UTR4410	Fast Rectifier (100-500ns)	Microsemi
20	UTR4410HR2	RECTIFIERS	Microsemi

Datasheets found :: 20 Page: | 1 |