No. |
Part Name |
Description |
Manufacturer |
1 |
150KR5A |
Diode Switching 50V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
2 |
300UR5A |
Standard recovery diode |
International Rectifier |
3 |
302UR5A |
Standard recovery diode |
International Rectifier |
4 |
AFBR-57R5AP |
AFBR-57R5AP · 4/2/1 Gb/s SFP Transceiver for GbE and Fibre Channel, 150m |
Agilent (Hewlett-Packard) |
5 |
AFBR-57R5AP |
AFBR-57R5AP · 4/2/1 Gb/s SFP Transceiver for GbE and Fibre Channel, 150m |
Agilent (Hewlett-Packard) |
6 |
AP2112R5A-1.2TRG1 |
600mA CMOS LDO REGULATOR WITH ENABLE |
Diodes |
7 |
AP2112R5A-1.8TRG1 |
600mA CMOS LDO REGULATOR WITH ENABLE |
Diodes |
8 |
AP2112R5A-2.5TRG1 |
600mA CMOS LDO REGULATOR WITH ENABLE |
Diodes |
9 |
AP2112R5A-2.6TRG1 |
600mA CMOS LDO REGULATOR WITH ENABLE |
Diodes |
10 |
AP2112R5A-3.3TRG1 |
600mA CMOS LDO REGULATOR WITH ENABLE |
Diodes |
11 |
AP2115R5A-1.2TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
12 |
AP2115R5A-1.8TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
13 |
AP2115R5A-2.5TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
14 |
AP2115R5A-3.3TRG1 |
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE |
Diodes |
15 |
B3020R5A |
200VDC; 0.5Amp; PC board mount solid state relay |
International Rectifier |
16 |
BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
17 |
BCR5AM |
Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
18 |
BCR5AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
19 |
BCR5AM-12 |
Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
20 |
BCR5AM-12L |
Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
21 |
BCR5AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
22 |
BCR5AM-8 |
Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
23 |
BCR5AM-8L |
Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
24 |
BCR5AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
25 |
BCR5AS |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
26 |
BCR5AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
27 |
BCR5AS-12 |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
28 |
BCR5AS-12L |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
29 |
BCR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
30 |
BCR5AS-8L |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| | | |