| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APT1001R6BFLLG |
FREDFETs |
Microsemi |
| 2 |
APT1001R6BN |
POWER MOS IV 1000V 8.0A 1.60 Ohm |
Advanced Power Technology |
| 3 |
APT1201R6BVFR |
MOSFET |
Advanced Power Technology |
| 4 |
APT1201R6BVFRG |
FREDFETs |
Microsemi |
| 5 |
APT1201R6BVR |
POWER MOS V 1200V 8A 1.600 Ohm |
Advanced Power Technology |
| 6 |
EEUFC2A5R6B |
Aluminum Electrolytic Capacitors (Radial Lead Type) FC-A |
Panasonic |
| 7 |
ER6B |
6 Amp Super Fast Recovery Rectifier 50 to 400 Volts |
Micro Commercial Components |
| 8 |
ER6B1 |
3 AMP ENCAPSULATED ASSEMBLIES |
Microsemi |
| 9 |
FR6B |
6 Amp Fast Recovery Rectifier 50 to 1000 Volts |
MCC |
| 10 |
FR6B |
6 Amp Fast Recovery Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 11 |
FR6B02 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 12 |
FR6B05 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 13 |
FR6BR02 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 14 |
FR6BR05 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 15 |
K6F8016R6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 16 |
K6F8016R6B FAMILY |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
| 17 |
K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 18 |
R6B SMD |
Marking for NE68330 part number, 30 NEC package |
NEC |
| | | |
