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Datasheets for RAM

Datasheets found :: 49863
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
2 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
3 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
4 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
5 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
6 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
7 28C64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com Microchip
8 28F3204W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) Intel
9 28F320W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) Intel
10 28F6408W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) Intel
11 28F640W30 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) Intel
12 28LV64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle Microchip
13 29F10 Microprogram Controller Fairchild Semiconductor
14 29F68 Dynamic RAM Controller Fairchild Semiconductor
15 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
16 3DSD1280-883D-S 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
17 3DSD1280-PROTO 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
18 4036BP 4 word x 8 bit static RAM (binary addressing) TOSHIBA
19 4039BP 4 word x 8 bit static RAM (direct word-line addressing) TOSHIBA
20 41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
21 54F410 Register Stack - 16x4 RAM 3-State Output Register Fairchild Semiconductor
22 54F410 Register Stack 16 x 4 RAM TRI-STATE Output Register National Semiconductor
23 54F410DM Register Stack��16 x 4 RAM TRI-STATEE Output Register National Semiconductor
24 54F410DMQB Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] National Semiconductor
25 54F410DMQB Register Stack 16 x 4 RAM TRI-STATE Output Register [Life-time buy] National Semiconductor
26 54F410LM Register Stack��16 x 4 RAM TRI-STATEE Output Register National Semiconductor
27 54F411 FIFO RAM Controller Fairchild Semiconductor
28 5962-0151101QXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none Aeroflex Circuit Technology
29 5962-0151101TXC 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none Aeroflex Circuit Technology
30 5962-0153301QXC 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. Aeroflex Circuit Technology


Datasheets found :: 49863
Page: | 1 | 2 | 3 | 4 | 5 |



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