| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 2 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 3 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
| 4 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
| 5 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
| 6 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
| 7 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
| 8 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 9 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 10 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 11 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 12 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 13 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 14 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 15 |
4N25 |
4N25 · General Purpose Phototransistor Optocoupler |
Agilent (Hewlett-Packard) |
| 16 |
4N25 |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 17 |
4N25 |
6-Pin DIP Optoisolators Transistor Output |
Motorola |
| 18 |
4N25 |
Photocouplers - Transistor Output |
TOSHIBA |
| 19 |
4N25 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
| 20 |
4N25-000E |
4N25-000E · Lead Free General Purpose Phototransistor Optocoupler |
Agilent (Hewlett-Packard) |
| 21 |
4N25-M |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 22 |
4N25.300 |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 23 |
4N25.300W |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 24 |
4N25.3S |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 25 |
4N25.3SD |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 26 |
4N25.S |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 27 |
4N25.SD |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 28 |
4N25.W |
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild Semiconductor |
| 29 |
4N25300 |
6-Pin DIP Package Phototransistor Output Optocoupler |
Fairchild Semiconductor |
| 30 |
4N25300W |
6-Pin DIP Package Phototransistor Output Optocoupler |
Fairchild Semiconductor |
| | | |
