| No. |
Part Name |
Description |
Manufacturer |
| 1 |
24LC21A |
The 24LC21A is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LC21A represents a simple, low-cost route to meeting the stringent standards |
Microchip |
| 2 |
24LCS21 |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LCS21 represents a simple, low-cost route to meeting the stringent standards |
Microchip |
| 3 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
| 4 |
2N7002 |
0.2W Power MOSFET, 60V Vdss, 0.115A Id, 7.5Om Rds |
SemiWell Semiconductor |
| 5 |
2SJ598 |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252 |
NEC |
| 6 |
2SJ598-Z |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252 |
NEC |
| 7 |
2SJ600 |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3 |
NEC |
| 8 |
2SJ600-Z |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3 |
NEC |
| 9 |
2SJ601 |
Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z) |
NEC |
| 10 |
2SJ601-Z |
Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z) |
NEC |
| 11 |
2SJ602 |
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 12 |
2SJ602-S |
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 13 |
2SJ602-ZJ |
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 14 |
2SJ603 |
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 15 |
2SJ603-S |
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 16 |
2SJ603-ZJ |
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263 |
NEC |
| 17 |
2WK516 |
KEYBOARDS 4�4 PUSH-BUTTONS |
Tesla Elektronicke |
| 18 |
2WK516 01 |
KEYBOARDS 4�4 PUSH-BUTTONS |
Tesla Elektronicke |
| 19 |
2WK516 11 |
KEYBOARDS 4�4 PUSH-BUTTONS |
Tesla Elektronicke |
| 20 |
2WK516 12 |
KEYBOARDS 4�4 PUSH-BUTTONS |
Tesla Elektronicke |
| 21 |
2WK516 13 |
KEYBOARDS 4�4 PUSH-BUTTONS |
Tesla Elektronicke |
| 22 |
448IRF |
Power MOSFET(Vdss=500V/ Rds(on)=0.60ohm/ Id=11A) |
International Rectifier |
| 23 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 24 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 25 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 26 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 27 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 28 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 29 |
730005 |
Evaluation Boards ot the CLC103 and CLC 203 |
Comlinear Corporation |
| 30 |
730006 |
Evaluation Boards ot the CLC103 and CLC 203 |
Comlinear Corporation |
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