No. |
Part Name |
Description |
Manufacturer |
1 |
1N4001A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
2 |
1N4002A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
3 |
1N4003A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
4 |
1N4004A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
5 |
1N4005A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
6 |
1N4006A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
7 |
1N4007A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
8 |
1N4009 |
Silicon planar switching diode in miniature design |
Siemens |
9 |
28C16 |
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
ST Microelectronics |
10 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
11 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
12 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
13 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
14 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
15 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
16 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
17 |
2N2096 |
ECDC® PNP transistor core drivers |
Sprague |
18 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
19 |
2N2097 |
ECDC® PNP transistor core drivers |
Sprague |
20 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
21 |
2N2099 |
ECDC® PNP transistor core drivers |
Sprague |
22 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
23 |
2N2100 |
ECDC® PNP transistor core drivers |
Sprague |
24 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
25 |
2N3252 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
26 |
2N3253 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
27 |
2N3253 |
Silicon Planar High Current core drivers - PNP Transistor |
Transitron Electronic |
28 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
29 |
2N3724 |
Silicon Planar High Current core drivers - PNP Transistor |
Transitron Electronic |
30 |
2N3725 |
Silicon Planar High Current core drivers - PNP Transistor |
Transitron Electronic |
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