No. |
Part Name |
Description |
Manufacturer |
1 |
CZRF12VB |
Zener Diodes, PD=0.2Watts, VZ=12V |
Comchip Technology |
2 |
CZRF12VB-HF |
Halogen Free Zener Diodes, PD=0.2Watts, VZ=12V |
Comchip Technology |
3 |
DRF1200 |
RF ISM VDMOS Power Transistors |
Microsemi |
4 |
DRF1201 |
RF ISM VDMOS Power Transistors |
Microsemi |
5 |
DRF1202 |
RF ISM VDMOS Power Transistors |
Microsemi |
6 |
DRF1203 |
RF ISM VDMOS Power Transistors |
Microsemi |
7 |
ELJRF12NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
8 |
ELJRF12NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
9 |
ERF12B1 |
Single Phase Bridge |
Microsemi |
10 |
GB10RF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
11 |
GB15RF120K |
1200V 18A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
12 |
GB25RF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 PIM Package |
International Rectifier |
13 |
HB52RF1289E2 |
1 GB Registered SDRAM DIMM 128-Mword � 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M � 4 Components) PC133 SDRAM |
Elpida Memory |
14 |
HB52RF1289E2-75B |
128-Mword x 72-bit; 133MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM |
Elpida Memory |
15 |
IRF120 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
16 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
17 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
18 |
IRF120 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
19 |
IRF120 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
20 |
IRF120-123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
21 |
IRF121 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
22 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
23 |
IRF121 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
24 |
IRF121 |
Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
25 |
IRF121 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
26 |
IRF122 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
27 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
28 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
29 |
IRF122 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
30 |
IRF122 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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