Datasheets for RF12

Datasheets found :: 62 Page: | 1 | 2 | 3 |

No.	Part Name	Description	Manufacturer
1	CZRF12VB	Zener Diodes, PD=0.2Watts, VZ=12V	Comchip Technology
2	CZRF12VB-HF	Halogen Free Zener Diodes, PD=0.2Watts, VZ=12V	Comchip Technology
3	DRF1200	RF ISM VDMOS Power Transistors	Microsemi
4	DRF1201	RF ISM VDMOS Power Transistors	Microsemi
5	DRF1202	RF ISM VDMOS Power Transistors	Microsemi
6	DRF1203	RF ISM VDMOS Power Transistors	Microsemi
7	ELJRF12NGFB	Chip Inductors - High Freq. Use (Non Magnetic Core)	Panasonic
8	ELJRF12NJFB	Chip Inductors - High Freq. Use (Non Magnetic Core)	Panasonic
9	ERF12B1	Single Phase Bridge	Microsemi
10	GB10RF120K	1200V 20A Low Vce Non Punch Through IGBT in a Econo2 PIM Package	International Rectifier
11	GB15RF120K	1200V 18A Low Vce Non Punch Through IGBT in a Econo2 PIM Package	International Rectifier
12	GB25RF120K	1200V 25A Low Vce Non Punch Through IGBT in a Econo2 PIM Package	International Rectifier
13	HB52RF1289E2	1 GB Registered SDRAM DIMM 128-Mword � 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M � 4 Components) PC133 SDRAM	Elpida Memory
14	HB52RF1289E2-75B	128-Mword x 72-bit; 133MHz memory bus; 2-bank module; 1GB registered SDRAM DIMM	Elpida Memory
15	IRF120	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
16	IRF120	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A.	General Electric Solid State
17	IRF120	8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs	Intersil
18	IRF120	Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA	New Jersey Semiconductor
19	IRF120	N-CHANNEL POWER MOSFETS	Samsung Electronic
20	IRF120-123	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
21	IRF121	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
22	IRF121	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A.	General Electric Solid State
23	IRF121	8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs	Intersil
24	IRF121	Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
25	IRF121	N-CHANNEL POWER MOSFETS	Samsung Electronic
26	IRF122	N-Channel Power MOSFETs/ 11 A/ 60-100 V	Fairchild Semiconductor
27	IRF122	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A.	General Electric Solid State
28	IRF122	8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs	Intersil
29	IRF122	Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
30	IRF122	N-CHANNEL POWER MOSFETS	Samsung Electronic

Datasheets found :: 62 Page: | 1 | 2 | 3 |