Datasheets for RF153

Datasheets found :: 20 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	IRF153	N-Channel Power MOSFETs/ 40 A/ 60 V/100 V	Fairchild Semiconductor
2	IRF153	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A.	General Electric Solid State
3	IRF153	33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs	Intersil
4	IRF153	Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
5	IRF153	N-CHANNEL POWER MOSFETS	Samsung Electronic
6	IRF153R	Trans MOSFET N-CH 80V 30A 3-Pin(2+Tab) TO-3	New Jersey Semiconductor
7	MBRF1535CT	SCHOTTKY ISOLATED PLASTIC RECTIFIER	General Semiconductor
8	MBRF1535CT	Rectifier: Schottky	Taiwan Semiconductor
9	MBRF1535CT	Dual Schottky Barrier Rectifier, Forward Current 15A	Vishay
10	MRF153	Power Field Effect Transistor N-Channel Enhancement Mode TMOS RF 300W 2-100MHz	Motorola
11	MRF1535FNT1	RF Power Field Effect Transistors	Motorola
12	MRF1535FT1	520 MHz, 35 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET	Freescale (Motorola)
13	MRF1535NT1	RF Power Field Effect Transistors	Motorola
14	MRF1535T1	520 MHz, 35 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET	Freescale (Motorola)
15	MRF1535T1	MRF1535T1, MRF1535FT1 520 MHz, 35 W, 12.5 V Lateral N-Channel RF Power MOSFETs	Motorola
16	MRF1535T1	MRF1535T1, MRF1535FT1 520 MHz, 35 W, 12.5 V Lateral N-Channel RF Power MOSFETs	Motorola
17	MRF1535T1	MRF1535T1, MRF1535FT1 520 MHz, 35 W, 12.5 V Lateral N-Channel RF Power MOSFETs	Motorola
18	SRF1535	Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A.	Chenyi Electronics
19	SRF1535	SCHOTTKY BARRIER RECTIFIER	Shanghai Sunrise Electronics
20	SRF1535A	Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 35 V. Max average forward rectified current 15.0 A.	Chenyi Electronics

Datasheets found :: 20 Page: | 1 |